Back to results
US 9,543,341 B2Granted
Solid-state imaging device and electronic apparatus
AssigneeSony Corporation
InventorsKazuichiro Itonaga, Shizunori Matsumoto
Life of this patent
Estimating the term…
Abstract
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4×n pixels (where, n is a positive integer), respectively, in horizontal and vertical directions.
Claims17
A solid-state imaging device comprising:
- a first structural unit including a first transfer transistor group sharing a first floating diffusion, the first transfer transistor group including four transfer transistors arranged around the first floating diffusion;
- and
- a second structural unit including a second transfer transistor group sharing a second floating diffusion, the second transfer transistor group including four transfer transistors arranged around the second floating diffusion;
- wherein the first and second floating diffusions are coupled to each other in a first direction,
- wherein the first and second transfer transistor groups share at least an amplification transistor and a reset transistor, the amplification transistor coupled to a select transistor,
- wherein a select wiring coupled to a gate electrode of the select transistor extends along the first direction, and
- wherein a first power supply wiring coupled to a drain region of the reset transistor extends along a second direction different from the first direction.
4 more elements
An electronic apparatus comprising:
- a solid-state imaging device comprising:
- a first structural unit including a first transfer transistor group sharing a first floating diffusion, the first transfer transistor group including four transfer transistors arranged around the first floating diffusion;
- and
- a second structural unit including a second transfer transistor group sharing a second floating diffusion, the second transfer transistor group including four transfer transistors arranged around the second floating diffusion;
- wherein the first and second floating diffusions are coupled to each other in a first direction,
- wherein the first and second transfer transistor groups share at least an amplification transistor and a reset transistor, the amplification transistor coupled to a select transistor,
- wherein a select wiring coupled to a gate electrode of the select transistor extends along the first direction, and
- wherein a first power supply wiring coupled to a drain region of the reset transistor extends along a second direction different from the first direction.
5 more elements
Dependencies are inferred from the claim text.