Photoelectric conversion device and method of manufacturing photoelectric conversion device
AssigneeCanon Kabushiki Kaisha
InventorJunji Iwata
Life of this patent
Estimating the term…
Abstract
A photoelectric conversion device includes a pixel including a transfer transistor transferring signal charges generated in a photoelectric conversion portion from a charge accumulation region to a floating diffusion region, and a peripheral transistor forming a peripheral circuit for controlling a read-out operation of a pixel signal based on the signal charges from the pixel. A gate electrode of the transfer transistor and the floating diffusion region are separated from each other by a first distance in a plan view. A gate electrode and a drain region of the peripheral transistor are separated from each other by a second distance smaller than the first distance in a plan view.
Claims7
A photoelectric conversion device comprising:
- a pixel including a transfer transistor transferring signal charges generated in a photoelectric conversion portion from a charge accumulation region to a floating diffusion region;
- and
- a peripheral transistor forming a peripheral circuit for controlling a read-out operation of a pixel signal based on the signal charges from the pixel,
- wherein a gate electrode of the transfer transistor and the floating diffusion region are separated from each other by a first distance in a plan view, and
- a gate electrode and a drain region of the peripheral transistor are separated from each other by a second distance smaller than the first distance in a plan view.
A method of manufacturing a photoelectric conversion device including a pixel including a transfer transistor transferring signal charges generated in a photoelectric conversion portion from a charge accumulation region to a floating diffusion region, and a peripheral transistor forming a peripheral circuit for controlling a read-out operation of a pixel signal based on the signal charges from the pixel, comprising:
- forming a gate electrode of the transfer transistor and a gate electrode of the floating diffusion region over a semiconductor substrate;
- forming the floating diffusion region in the semiconductor substrate so as to be separated from the gate electrode of the transfer transistor by a first distance in a plan view;
- and
- forming a drain region of the peripheral transistor in the semiconductor substrate so as to be separated from the gate electrode of the peripheral transistor by a second distance smaller than the first distance in a plan view.
Dependencies are inferred from the claim text.