Array substrate and method of fabricating the same

A method of fabricating an array substrate, the method comprising:

• forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, an island-shaped oxide semiconductor layer on the gate insulating layer corresponding to the gate electrode;
• forming an etch stopper on the oxide semiconductor layer and entirely over the substrate;
• forming a source electrode, a drain electrode and a pixel electrode on the etch stopper, wherein the source and drain electrodes are spaced apart from each other with the oxide semiconductor layer therebetween, wherein the pixel electrode is connected to the drain electrode;
• forming a first passivation layer on the source and drain electrodes and the pixel electrode and entirely over the substrate;
• forming first and second separate regions including first and second contact holes, respectively, the first separate region is located where an end of the oxide semiconductor layer and an end of the source electrode opposing each other are formed, and the second separate region is located where the other end of the oxide semiconductor layer and an end of the drain electrode opposing each other are formed,
• forming a conductive material layer at least in the first and second separate regions to form connection patterns which connect the oxide semiconductor layer to the source and drain electrodes at the first and second contact holes, respectively.