Semiconductor device and manufacturing method thereof, delamination method, and transferring method
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsJunya Maruyama, Toru Takayama, Yumiko Ohno, Shunpei Yamazaki
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Abstract
A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
Claims19
A method for manufacturing a display device comprising the steps of:
- forming a metal film comprising a metal over a first substrate;
- forming a first insulating film comprising oxygen over the metal film, wherein an oxide layer comprising the metal is formed by oxidation at an interface between the metal film and the first insulating film;
- forming a semiconductor element over the first insulating film;
- forming a second substrate over the semiconductor element;
- and
- separating the semiconductor element adhered to the second substrate from the first substrate.
A method for manufacturing a display device comprising the steps of:
- forming a metal film comprising tungsten over a first substrate;
- forming a first insulating film comprising oxygen over the metal film, wherein an oxide layer comprising the tungsten is formed by oxidation at an interface between the metal film and the first insulating film;
- forming a semiconductor element over the first insulating film;
- forming a second substrate over the semiconductor element;
- and
- separating the semiconductor element adhered to the second substrate from the first substrate.
A method for manufacturing a display device comprising the steps of:
- forming a metal film comprising tungsten over a first substrate;
- performing a plasma treatment to form an oxide layer over the metal film;
- forming a first insulating film comprising oxygen over the metal film;
- forming a semiconductor element over the first insulating film;
- forming a second substrate over the semiconductor element;
- and
- separating the semiconductor element adhered to the second substrate from the first substrate.
A method for manufacturing a display device comprising the steps of:
- forming a metal film comprising tungsten over a first substrate;
- forming a first insulating film comprising oxygen over the metal film, wherein an oxide layer comprising the tungsten is formed by oxidation at an interface between the metal film and the first insulating film;
- performing a heat treatment to increase a proportion of WO2 in the oxide layer;
- forming a semiconductor element over the first insulating film;
- forming a second substrate over the semiconductor element;
- and
- separating the semiconductor element adhered to the second substrate from the first substrate.
Dependencies are inferred from the claim text.