Thin film transistor substrate and method for manufacturing the same

A thin film transistor substrate including a plurality of pixels arranged in matrix, wherein

• each of said pixels includes:
• a gate electrode and a common electrode selectively disposed on a substrate;
• a gate insulating film that covers said gate electrode and said common electrode;
• a transparent oxide film selectively disposed on said gate insulating film;
• a source electrode and a drain electrode that are spaced from each other on said transparent oxide film and overlap said gate electrode;
• a light transmissive pixel electrode electrically connected to said drain electrode;
• a protective insulating film that covers said source electrode, said drain electrode, and said pixel electrode;
• and
• a counter electrode disposed on said protective insulating film opposite to said pixel electrode,
• said counter electrode being electrically connected to said common electrode through a contact hole that penetrates said protective insulating film and said gate insulating film,
• said transparent oxide film including a conductive region and a semiconductor region,
• said conductive region being disposed in a lower portion of said source electrode and said drain electrode and disposed in a portion that continues from the lower portion of said drain electrode and forms said pixel electrode, thereby forming said pixel electrode,
• said semiconductor region being disposed in a portion that corresponds to a lower layer in a region between said source electrode and said drain electrode and forming a channel region of a thin film transistor,
• said source electrode and said drain electrode being electrically connected to said conductive region of said transparent oxide film.

A thin film transistor substrate including a plurality of pixels arranged in matrix, wherein

• each of said pixels includes:
• a gate electrode and a common electrode selectively disposed on a substrate;
• a gate insulating film that covers said gate electrode and said common electrode;
• a transparent oxide film selectively disposed on said gate insulating film;
• an n-type Si film that is selectively disposed on said transparent oxide film and contains an n-type impurity;
• a source electrode and a drain electrode that are spaced from each other over said transparent oxide film through said n-type Si film and overlap said gate electrode;
• and
• a light transmissive pixel electrode electrically connected to said drain electrode,
• said transparent oxide film including a conductive region and a semiconductor region,
• said conductive region being disposed below said source electrode and said drain electrode and disposed in a portion that continues from the lower portion of said drain electrode, extends to part of an upper portion of said common electrode, and forms said pixel electrode, thereby forming said pixel electrode,
• said semiconductor region being disposed in a portion that corresponds to a lower layer in a region between said source electrode and said drain electrode and forming a channel region of a thin film transistor,
• said source electrode and said drain electrode being electrically connected to said conductive region of said transparent oxide film through said n-type Si film.

A thin film transistor substrate including a plurality of pixels arranged in matrix, wherein

• each of said pixels includes:
• a gate electrode and a common electrode selectively disposed on a substrate;
• a gate insulating film that covers said gate electrode and said common electrode;
• a transparent oxide film selectively disposed on said gate insulating film;
• an n-type Si film that is selectively disposed on said transparent oxide film and contains an n-type impurity;
• a source electrode and a drain electrode that are spaced from each other over said transparent oxide film through said n-type Si film and overlap said gate electrode;
• a light transmissive pixel electrode electrically connected to said drain electrode;
• a protective insulating film that covers said source electrode, said drain electrode, and said pixel electrode;
• and
• a counter electrode disposed on said protective insulating film opposite to said pixel electrode,
• said counter electrode being electrically connected to said common electrode through a contact hole that penetrates said protective insulating film and said gate insulating film,
• said transparent oxide film including a conductive region and a semiconductor region,
• said conductive region being disposed below said source electrode and said drain electrode and disposed in a portion that continues from the lower portion of said drain electrode and forms said pixel electrode, thereby forming said pixel electrode,
• said semiconductor region being disposed in a portion that corresponds to a lower layer in a region between said source electrode and said drain electrode and forming a channel region of a thin film transistor,
• said source electrode and said drain electrode being electrically connected to said conductive region of said transparent oxide film through said n-type Si film.