Metal oxide TFT device and method for manufacturing the same

A method for manufacturing a pixel circuit, comprising:

• selecting a substrate and forming a gate, a gate line, and a first storage capacitor electrode on a first side of the substrate;
• sequentially depositing an insulating layer, a metal oxide semiconductor layer, and a photoresist layer on the gate electrode, the gate line, the first storage capacitor electrode, and the first side of the substrate;
• using the gate electrode, the gate line, and the first storage capacitor electrode as photomasks, exposing from a second side of the substrate that opposes to the first side, and reserving parts of the photoresist layer that align to the gate electrode, the gate line, and the first storage capacitor electrode;
• depositing an electrode layer on the metal oxide semiconductor layer and the reserved photoresist layer;
• stripping the reserved photoresist layer and lifting off parts of the electrode layer that are stacked on the reserved photoresist layer, so as to expose parts of the metal oxide semiconductor layer that align to the gate electrode, the gate line, and the first storage capacitor electrode, and reserving other parts of the electrode layer;
• and
• etching a part of the reserved electrode layer and the metal oxide semiconductor layer, and forming a source electrode, a drain electrode, and a metal oxide semiconductor island.