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US 9,543,327 B2Granted
Semiconductor device having insulation layer with concave portion and semiconductor layer that includes channel area disposed at concave portion, electro-optical device, method of manufacturing semiconductor device, method of manufacturing electro-optical device, and electronic apparatus
AssigneeSeiko Epson Corporation
InventorMasashi Nakagawa
Life of this patent
Estimating the term…
Abstract
A first insulation layer includes a concave portion. A semiconductor layer includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer. A gate insulation layer covers the channel area. A gate electrode is disposed to be opposed to the channel area via the gate insulation layer. A first electrode is one of a source electrode and a drain electrode. A second electrode is the other of the source electrode and the drain electrode.
Claims17
A semiconductor device comprising:
- a first insulation layer which is disposed in a first area and a second area, the first insulation layer including a concave portion disposed in the first area;
- a semiconductor layer which includes a source region, a drain region, and a channel region;
- a gate insulation layer which covers the channel region;
- and
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer,
- wherein the concave portion is not disposed in the second area, the channel region of the semiconductor layer is disposed at the concave portion, and the source region of the semiconductor layer and the drain region of the semiconductor layer are disposed in the second area.
3 more elements
An electro-optical device comprising:
- a semiconductor device comprising:
- a first insulation layer which includes a concave portion;
- a semiconductor layer which includes one of a source region and a drain region, the other of the source region and the drain region, and a channel region disposed at the concave portion;
- a gate insulation layer which covers the channel region;
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer;
- a first electrode which is one of a source electrode and a drain electrode;
- and
- a second electrode which is the other of the source electrode and the drain electrode,
- a base;
- a plurality of scan lines;
- and
- a plurality of data lines which are arranged so as to intersect each of the plurality of scan lines,
- wherein the semiconductor device is electrically connected to any one of the plurality of scan lines and any one of the plurality of data lines, and the scan line is arranged between the base and the semiconductor device.
10 more elements
An electro-optical device comprising:
- an element substrate which includes a semiconductor device and a pixel electrode electrically connected to the semiconductor device, the semiconductor device comprising:
- a first insulation layer which includes a concave portion;
- a semiconductor layer which includes a source region, a drain region, and a channel region disposed at the concave portion;
- a gate insulation layer which covers the channel region;
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer;
- an opposing substrate which is disposed so as to be opposed to the element substrate;
- and
- an electro-optical layer which is interposed between the element substrate and the opposing substrate.
5 more elements
A semiconductor device comprising:
- a first insulation layer which is disposed in a first area and a second area, the first insulation layer including a concave portion disposed in the first area;
- a semiconductor layer which includes a source region, a drain region, a channel region, a first LDD region between the channel region and the source region, and a second LDD region between the channel region and the drain region;
- a gate insulation layer which covers the channel region;
- and
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer;
- wherein the concave portion is not disposed in the second area, the channel region of the semiconductor layer is disposed at the concave portion, and the first LDD region of the semiconductor layer and the second LDD region of the semiconductor layer are disposed in the second area.
3 more elements
A semiconductor device comprising:
- a first insulation layer which includes a concave portion;
- a semiconductor layer which includes a channel region disposed at the concave portion;
- a gate insulation layer which covers the channel region;
- a gate electrode which is disposed so as to be opposed to the channel region via the gate insulation layer;
- a first electrode which is one of a source electrode and a drain electrode;
- and
- a second electrode which is the other of the source electrode and the drain electrode,
- wherein the first electrode is disposed in a first contact hole which is disposed so as to penetrate the gate insulation layer and a second insulation layer which covers the semiconductor layer and the gate electrode, and the second electrode is disposed in a second contact hole which is disposed so as to penetrate the gate insulation layer and the second insulation layer.
5 more elements
Dependencies are inferred from the claim text.