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AssigneeBoe Technology Group Co., Ltd.
InventorsSeungjin Choi, Heecheol Kim, Youngsuk Song, Seongyeol Yoo
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An array substrate and a manufacturing method thereof, a liquid crystal display panel and a display device are provided, the array substrate comprises a base substrate, and thin film transistors and pixel electrodes provided on the base substrate, the pixel electrode and the active layer in the thin film transistor are provided in the same layer. The active layer is formed of transparent oxide semiconductor material, and the concentration of carriers in the oxide semiconductor material may be increased by performing a plasma process on the oxide semiconductor material, thus the pixel electrode may be manufactured by using the oxide semiconductor material used for manufacturing the active layer, thereby the pixel electrode and the active layer can be provided in the same layer, the number of the masks can be reduced, the manufacturing process is simplified, production cost is saved, the productivity is increased, and the manufacturing time is shortened.
An array substrate comprising a base substrate, and thin film transistors and pixel electrodes provided on the base substrate, wherein the thin film transistor comprises a gate and an active layer which are insulated from each other, and a drain and a source which are electrically connected to the active layer, a pixel electrode is electrically connected to a drain, wherein
A manufacturing method of array substrate comprising forming a pattern including thin film transistors and pixel electrodes on a base substrate, wherein the array substrate comprises a base substrate, and thin film transistors and pixel electrodes provided on the base substrate, and wherein the thin film transistor comprises a gate and an active layer which are insulated from each other, and a drain and a source which are electrically connected to the active layer, a pixel electrode is electrically connected to a drain, wherein the pixel electrode and the active layer are provided in the same layer and are formed integratedly, wherein the pixel electrode and the active layer are connected together, the material forming the active layer is transparent oxide semiconductor material, the material forming the pixel electrode is a material obtained by performing plasma treatment on the transparent oxide semiconductor material forming the active layer, wherein
Dependencies are inferred from the claim text.