Method for manufacturing a nonvolatile memory device
AssigneeSK hynix Inc.
InventorDo-Young Kim
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Abstract
A method for manufacturing a nonvolatile memory device in accordance with an embodiment of the present invention may include providing a substrate comprising a cell region and a peripheral region, wherein the peripheral region comprises an NMOS region and a PMOS region; performing a well forming ion implantation over the substrate in the cell region and the NMOS region; performing a threshold voltage adjusting ion implantation over a surface of the substrate in the cell region and the NMOS region; forming a gate pattern comprising a floating gate electrode in the cell region and the peripheral region; and performing a junction ion implantation over a surface of the cell region, wherein the floating gate electrode may have P-type conductivity.
Claims12
A method for manufacturing a nonvolatile memory device comprising:
- providing a substrate comprising a cell region and a peripheral region, wherein the peripheral region comprises an NMOS region and a PMOS region;
- performing a well forming ion implantation over the substrate in the cell region and the NMOS region;
- performing a threshold voltage adjusting ion implantation over a surface of the substrate in the cell region and the NMOS region;
- forming a gate pattern comprising a floating gate electrode in the cell region and the peripheral region;
- and
- performing a junction ion implantation over a surface of the cell region,
- wherein the floating gate electrode has P-type conductivity.
Dependencies are inferred from the claim text.