Semiconductor storage device having communicated air gaps between adjacent memory cells

A semiconductor storage device comprising:

• a semiconductor substrate;
• a plurality of memory cells on the semiconductor substrate;
• and
• a first film above the memory cells to form air gaps above a memory string in which the memory cells are connected in series, wherein
• the air gaps are also provided between adjacent ones of the memory cells,
• the air gaps are communicated with each other between adjacent ones of the memory cells in the memory string and on the memory cells in the memory string, and
• the air gaps are closed at portions on select gate transistors on both ends of the memory string.