US 9,543,299 B1 · P-N bimodal conduction resurf LDMOS

Abstract

RESURF-based dual-gate p-n bimodal conduction laterally diffused metal oxide semiconductors (LDMOS). In an illustrative embodiment, a p-type source is electrically coupled to an n-type drain. A p-type drain is electrically coupled to an n-type source. An n-type layer serves as an n-type conduction channel between the n-type drain and the n-type source. A p-type top layer is disposed at the surface of the substrate of said semiconductor device and is disposed above and adjacent to the n-type layer. The p-type top layer serves as a p-type conduction channel between the p-type source and the p-type drain. An n-gate controls current flow in the n-type conduction channel, and a p-gate controls current flow in the p-type conduction channel.

Claims11

Dependent claims

A laterally diffused metal oxide semiconductor (LDMOS) device comprising:

an n-type drain;
an n-type source;
a p-type source electrically coupled to the n-type drain;
a p-type drain electrically coupled to the n-type source;
an n-type layer operable to serve as an n-type conduction channel between the n-type drain and the n-type source;
a p-type top layer disposed above and adjacent to said n-type layer, said p-type top layer being operable to serve as a p-type conduction channel between the p-type source and the p-type drain;
an n-gate positioned closer to the n-type source than the n-type drain and operable to control current flow in the n-type conduction channel;
and
a p-gate positioned closer to the p-type source than the p-type drain and operable to control current flow in the p-type conduction channel.

6 more elements

Dependencies are inferred from the claim text.

P-N bimodal conduction resurf LDMOS

Life of this patent

P-N bimodal conduction resurf LDMOS

Life of this patent

Abstract

Claims11