Semiconductor device

A semiconductor device comprising:

• a first circuit;
• a second circuit;
• and
• a third circuit,
• wherein the first circuit comprises a first transistor, a first capacitor, and a first wiring,
• wherein the first transistor comprises a first conductor and a first oxide semiconductor,
• wherein the first conductor comprises a region in contact with the first oxide semiconductor,
• wherein one terminal of the first capacitor is electrically connected to the first conductor,
• wherein the other terminal of the first capacitor is electrically connected to the first wiring,
• wherein the second circuit comprises a second transistor, a second capacitor, and a second wiring,
• wherein the second transistor comprises a second conductor and a second oxide semiconductor,
• wherein the second conductor comprises a region in contact with the second oxide semiconductor,
• wherein one terminal of the second capacitor is electrically connected to the second conductor,
• wherein the other terminal of the second capacitor is electrically connected to the second wiring,
• wherein the third circuit comprises a third transistor,
• wherein the third transistor comprises a third conductor, a third oxide semiconductor, a first insulator, a second insulator, and a third insulator,
• wherein the third conductor and the third oxide semiconductor overlap with each other,
• wherein the first insulator is positioned between the third conductor and the third oxide semiconductor,
• wherein the second insulator is positioned between the third conductor and the first insulator,
• wherein the third insulator is positioned between the third conductor and the second insulator,
• wherein the second insulator comprises an electron trap region,
• wherein a gate voltage at which a drain current in a subthreshold region is 1×10−12 A is greater than or equal to 0.8 V and less than or equal to 1.5 V in the first transistor, and
• wherein a gate voltage at which a drain current in a subthreshold region is 1×10−12 A is greater than or equal to 0 V and less than or equal to 0.7 V in the second transistor.