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US 9,543,292 B2Granted
Field effect transistor with integrated Zener diode
AssigneeAlpha and Omega Semiconductor Incorporated
InventorHideaki Tsuchiko
Life of this patent
Estimating the term…
Abstract
One or more Zener diodes and a field effect transistor having a drain connected in series with the one or more Zener diodes are integrally formed by a plurality of doped regions in the same P-type semiconductor substrate and separated by a punch through stop region. An N-type region is formed under the one or more Zener diodes.
Claims31
A device, comprising:
- one or more Zener diodes;
- and
- a field effect transistor having a drain connected in series with the one or more Zener diodes;
- wherein the one or more Zener diodes and field effect transistor are formed by a plurality of doped regions on a common P-type semiconductor substrate and separated by a punch through stop region;
- and
- an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate, wherein the one or more Zener diodes include an N-type region formed in the common P-type substrate and a P-type region formed in a layer of the P-type substrate adjacent the N-type region.
3 more elements
A device, comprising:
- one or more Zener diodes;
- and
- a field effect transistor having a drain connected in series with the one or more Zener diodes;
- wherein the one or more Zener diodes and field effect transistor are formed by a plurality of doped regions on a common P-type semiconductor substrate and separated by a punch through stop region;
- and
- an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate;
- and
- an isolation structure formed in the common P-type semiconductor substrate over the N-type region between the one or more Zener diodes and the field effect transistor, wherein the isolation structure includes an N-type well and a high voltage N-well that is formed over the N-type well, wherein the high voltage N-well is more heavily N-type doped than the N-type well.
5 more elements
A device, comprising:
- one or more Zener diodes;
- and
- a field effect transistor having a drain connected in series with the one or more Zener diodes;
- wherein the one or more Zener diodes and field effect transistor are formed by a plurality of doped regions on a common P-type semiconductor substrate and separated by a punch through stop region;
- and
- an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate, wherein the one or more Zener diodes include first and second Zener diodes connected to each other in series.
3 more elements
A device, comprising:
- one or more Zener diodes;
- and
- a field effect transistor having a drain connected in series with the one or more Zener diodes;
- wherein the one or more Zener diodes and field effect transistor are formed by a plurality of doped regions on a common P-type semiconductor substrate and separated by a punch through stop region;
- and
- an N-type region formed under the one or more Zener diodes configured to stop punch through from a P-well or P-body region of the Zener diode to the common P-type semiconductor substrate, wherein the plurality of doped regions include a plurality of concentric regions with a cathode of one of the one or more Zener diodes located at a center of the plurality of concentric regions.
3 more elements
Dependencies are inferred from the claim text.