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US 9,543,291 B2Granted
Method of forming a high electron mobility semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsPeter Moens, Jaume Roig Guitart
Life of this patent
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Abstract
In one embodiment, a method of forming a semiconductor device can comprise; forming a HEM device on a semiconductor substrate. The semiconductor substrate provides a current carrying electrode for the semiconductor device and one or more internal conductor structures provide a vertical current path between the semiconductor substrate and regions of the HEM device.
Claims19
A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate provides a first current carrying electrode of the semiconductor device;
- a plurality of III-nitride layers on the semiconductor substrate to provide an HEM structure;
- and
- an internal conductor structure extending from proximate to a major surface of the HEM structure to the semiconductor substrate providing a vertical current path from the semiconductor substrate to the HEM structure, wherein the internal conductor structure comprises:
- a trench;
- a dielectric liner along a trench sidewall, the dielectric liner having an opening proximate to a bottom surface of the trench;
- a trench filling comprising a conductive layer, wherein the trench filling makes contact to the semiconductor substrate and to a 2DEG region of the HEM device;
- and
- a first current carrying contact adjoining a back surface of the semiconductor substrate and in electrical communication with the trench filling.
6 more elements
A cascode semiconductor structure comprising:
- a depletion mode HEMT device comprising:
- a base substrate of a first semiconductor material, wherein the base substrate forms a first current carrying electrode;
- a heterostructure comprising a III-nitride channel layer over the base substrate and a III-nitride barrier layer over the channel layer;
- a second current carrying electrode coupled to the barrier layer;
- a first gate electrode overlying a portion of the barrier layer and spaced apart from the second current carrying electrode;
- and
- a first internal conductor structure extending from the barrier layer through the channel layer to the base substrate, wherein the first internal conductor structure forms a low resistance electrical current path from the base substrate to the barrier layer;
- and
- a MOSFET device comprising:
- a second gate electrode;
- a third current carrying electrode electrically coupled to the first gate electrode;
- and
- fourth current carrying electrode electrically coupled to the first internal conductor structure.
10 more elements
A cascode semiconductor structure comprising:
- a depletion mode HEMT device comprising:
- a base substrate of a first semiconductor material, wherein the base substrate forms a first current carrying electrode;
- a heterostructure comprising a III-nitride channel layer over the base substrate and a III-nitride barrier layer over the channel layer;
- a second current carrying electrode coupled to the barrier layer;
- a first gate electrode overlying a portion of the barrier layer and spaced apart from the second current carrying electrode;
- and
- a first internal conductor structure extending from the barrier layer through the channel layer to the base substrate, wherein the first internal conductor structure comprises a first conductor within the barrier layer, a second conductor extending from the first conductor to the base substrate, and an insulator between the second conductor layer and the channel;
- and
- a MOSFET device comprising:
- a second gate electrode;
- a third current carrying electrode electrically coupled to the first gate electrode;
- and
- fourth current carrying electrode electrically coupled to the first internal conductor structure.
10 more elements
Dependencies are inferred from the claim text.