Normally-off junction field-effect transistors and application to complementary circuits
AssigneeInternational Business Machines Corporation
InventorsBahman Hekmatshoartabari, Ghavam G. Shahidi
Life of this patent
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Abstract
A junction field-effect transistor (JFET) with a gate region that includes two separate sub-regions having material of different conductivity types and/or a Schottky junction that substantially suppresses gate current when the gate junction is forward-biased, as well as complementary circuits that incorporate such JFET devices.
Claims17
A junction field effect transistor (JFET) comprising:
- a channel region comprised of a crystalline material;
- and
- a gate region comprised of a hydrogenated silicon material;
- wherein:
- the gate region includes a first gate sub-region and a second gate sub-region;
- the first gate sub-region forms a junction with the channel region;
- the second gate sub-region forms a junction with the first gate sub-region;
- the channel region and the second gate sub-region include material of a first conductivity type;
- and
- the first gate sub-region includes material of a second conductivity type different from the first conductivity type.
A junction field effect transistor (JFET) comprising:
- a channel region;
- and
- a gate region;
- wherein:
- the gate region includes a first gate sub-region and a second gate sub-region;
- the first gate sub-region forms a junction with the channel region;
- the second gate sub-region forms a junction with the first gate sub-region;
- the channel region and the second gate sub-region include material of a first conductivity type;
- and
- the first gate sub-region includes material of a second conductivity type different from the first conductivity type;
- and
- a back gate coupled to the channel region though a dielectric.
A complementary circuit comprised of a junction field effect transistor (JFET) and a metal-oxide-semiconductor field-effect transistor (MOSFET), each having a gate, drain, and source electrode and a channel region;
- wherein:
- the JFET includes a gate region;
- the gate region of the JFET includes a first gate sub-region and a second gate sub-region;
- the first gate sub-region forms a junction with the JFET channel region;
- the second gate sub-region forms a junction with the first gate sub-region;
- the MOSFET and JFET channel regions and the second gate sub-region include material of a first conductivity type;
- the first gate sub-region includes material of a second conductivity type different from the first conductivity type;
- and
- at least one of the gate, drain or source electrode(s) of the JFET is electrically connected to the gate, drain, or source electrode(s), respectively, of the MOSFET.
Dependencies are inferred from the claim text.