Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorMasahiko Kuraguchi
Life of this patent
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Abstract
A semiconductor device which is capable of operating at an operation frequency “f”, includes a substrate, a first element unit and a second element unit. The substrate has a thermal diffusion coefficient “D”. The first element unit is formed on the substrate. The first element includes a first active element. The second element unit is adjacent to the first element unit on the substrate. The second element includes a second active element. The second active element acts on a different timing from the first active element. Moreover, a distance of between a first gravity center of the first element unit and a second gravity center of the second element unit is equal to or less than twice of a thermal diffusion length (D/πf)1/2.
Claims10
A wide-gap semiconductor device, the device comprising:
- a substrate having a thermal diffusion coefficient “D”;
- a plurality of first element units formed on the substrate, the first element units each including a first active element;
- and
- a plurality of second element units, the second element units each including a second active element, the second active element acting on a different timing from the first active element each of the first element units and each of the second element units being arranged alternately, wherein
- a distance of between a first gravity center of the first element unit and a second gravity center of the second element unit is equal to or less than twice of a thermal diffusion length (D/(πf))1/2, excluding zero, so that the first element units and the second element units are spatially separated from each other, and wherein
- any two of the first element units do not share a first electrode or a second electrode with each other, and wherein
- any two of the second element units do not share the first electrode or the second electrode with each other, and wherein
- the first electrode and the second electrode are included in each of the first element units and each of the second element units, and wherein
- the thermal diffusion length being within a range when the semiconductor operates at a frequency “f’, and the frequency “f’ being between 10 kHz and 1 MHz, and wherein
- the first active element units are transistors and the second active elements are diodes.
A wide-gap semiconductor device, the device comprising:
- a substrate having a thermal diffusion coefficient “D”;
- a plurality of first element units formed on the substrate, the first element units each including a first active element;
- and
- a plurality of second element units, the second element units each including a second active element, the second active element acting on a different timing from the first active element, each of the first element units and each of the second element units being arranged alternately wherein
- each of the first element units and the second element units are repeatedly arranged with a cycle, a half of the cycle being equal to or less than twice of a thermal diffusion length (D/(πf))1/2, the cycle excluding zero, so that the first element units and the second element units are spatially separated from each other, and wherein
- any two of the first element units do not share a first electrode or a second electrode with each other,
- any two of the second element units do not share the first electrode or the second electrode with each other, and wherein
- the first electrode and the second electrode are included in each of the first element units and each of the second element units, and wherein
- the thermal diffusion length being within a range when the semiconductor operates at a frequency “f’, and the frequency “f’ being between 10 kHz and 1 MHz, and wherein
- the first active element units are transistors and the second active elements are diodes.
Dependencies are inferred from the claim text.