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US 9,543,284 B2Granted
3D packages and methods for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Chih Yew, Fu-Jen Li, Kuo-Chuan Liu, Po-Yao Lin, Wen-Yi Lin
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Abstract
Embodiments of the present disclosure include a semiconductor device, a package and methods of forming a semiconductor device and a package. An embodiment is a semiconductor device including a molding material over a first substrate with a first opening having a first width in the molding material. The semiconductor device further includes a second opening having a second width in the molding material with the second width being greater than the first width. A first connector is in the first opening and a second connector is in the second opening.
Claims20
A method of forming a semiconductor device, the method comprising:
- molding a molding material over a first substrate, the first substrate comprising a first edge region, a middle region next to the first edge region, and a second edge region next to the middle region and opposite the first edge region;
- forming a first opening in the molding material in the first edge region, the first opening having a first width;
- forming a first connector in the first opening;
- forming a second opening in the molding material in the middle region, the second opening having a second width, the second width being greater than the first width;
- forming a second connector in the second opening;
- forming a third opening in the in the molding material in the second edge region, the third opening having a third width, the third width being greater than the second width;
- forming a third connector in the third opening;
- and
- bonding a second package to the first connector, the second connector, and the third connector, a first surface of the second package being physically separated from a first surface of the molding material by a first gap in the first edge region, a second gap in the middle region, and a third gap in the second edge region, the first gap being greater than the second gap, and the second gap being greater than the third gap.
6 more elements
A method of forming a semiconductor device, the method comprising:
- forming a first plurality of metallization layers and vias on a first side of a substrate;
- forming a second plurality of metallization layers and vias on a second side of the substrate, the second side being opposite the first side;
- bonding a die on the first side of the substrate;
- forming a first plurality of connectors on the first side of the substrate;
- molding a molding material on the first side of the substrate, a top surface of the molding material being coplanar with a top surface of the die, and the molding material having a first region, a second region, and a third region;
- forming a plurality of first openings in the molding material in the first region and the third region, the plurality of first openings having a first width at the top surface of the molding material;
- forming a plurality of second openings in the molding material in the second region, the plurality of second openings having a second width at the top surface of the molding material, the second width being greater than the first width;
- and
- forming a plurality of through-molding vias (TMVs) over the substrate, each of the plurality of TMVs being in one of the first plurality of openings or the second plurality of openings.
6 more elements
A method of forming a package, the method comprising:
- forming a bottom package having a first region, a second region, and a third region, the first and third regions being triangular from a top down view, a corner of each triangle being aligned with a respective diagonally opposite corner of the bottom package, wherein forming the bottom package further comprises:
- forming a molding material over a first substrate;
- forming a first plurality of openings in the molding material in the first region, the first plurality of openings having a first width at a first surface of the molding material;
- forming a second plurality of openings in the molding material in the second region, the second plurality of openings having a second width at the first surface of the molding material, the second width being greater than the first width;
- forming a third plurality of openings in the molding material in the third region, the third plurality of openings having a third width at the first surface of the molding material, the third width being greater than the second width;
- and
- forming a plurality of through-molding vias (TMVs) over the first substrate, each of the plurality of TMVs being in one of the first, second, and third plurality of openings;
- and
- coupling a top package to the plurality of TMVs, the top package comprising at least one active device, the first region having a first gap between the first surface of the molding material and a first surface of the top package, the second region having a second gap between the first surface of the molding material and the first surface of the top package, the second gap being smaller than the first gap, and the third region having a third gap between the first surface of the molding material and the first surface of the top package, the third gap being smaller than the second gap.
6 more elements
Dependencies are inferred from the claim text.