Semiconductor device with discrete blocks
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Wen Hsiao, Chen-Shien Chen, Wei Sen Chang, Shou-Cheng Hu
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Abstract
A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.
Claims20
A method of forming a semiconductor device, the method comprising:
- providing a die;
- providing a connection block having an integrated passive device and one or more conductive elements extending from a first side of the connection block to a second side of the connection block;
- forming a layer comprising the die and the connection block separated by a material layer, the connection block being formed of a material different from that of the material layer;
- and
- planarizing the integrated passive device with the connection block, the die, and the material layer.
A method of manufacturing a semiconductor device, the method comprising:
- placing a connection block separated from a semiconductor die, wherein the connection block comprises an integrated passive device and through substrate vias, the through substrate vias extending from a first side of the connection block to a second side of the connection block;
- encapsulating the connection block and the semiconductor die with an encapsulant;
- and
- planarizing the encapsulant, the semiconductor die, and the integrated passive device.
A method of manufacturing a semiconductor device, the method comprising:
- placing a semiconductor die onto a carrier;
- placing a connection block onto the carrier, wherein the connection block is laterally removed from the semiconductor die, the connection block further comprising:
- integrated passive devices;
- and
- vias that extend from a first side of the connection block to a second side of the connection block;
- encapsulating the semiconductor die and the connection block with an encapsulant while the semiconductor die and the connection block are on the carrier;
- and
- grinding the encapsulant until the encapsulant, the integrated passive devices and the semiconductor die are planar with each other.
Dependencies are inferred from the claim text.