Semiconductor packaging and manufacturing method thereof

A semiconductor package, comprising:

• a substrate;
• a passivation layer over the substrate;
• a post-passivation interconnect (PPI);
• and
• a conductive structure electrically connected to the PPI,
• wherein the PPI comprises:
• a first region electrically connected to the conductive structure, the first region comprising a first PPI thickness;
• and
• a second region surrounding the first region, a thickness of the first region and a thickness of the second region are substantially identical, the second region comprising:
• a metal derivative portion occupying an upper portion of the second region, and
• a PPI portion occupying a lower portion of the second region and under the metal derivative portion, the PPI portion comprising a second PPI thickness,
• wherein the first PPI thickness.

A semiconductor package, comprising:

• a substrate;
• a conductive layer over the substrate;
• and
• a first solder bump electrically connected to the conductive layer,
• wherein a top surface of the conductive layer comprises:
• a first region in proximity to the first solder bump electrically coupled with the first solder bump;
• and
• a second region in proximity to the first solder bump surrounding the first region in proximity to the first solder bump,
• wherein the second region in proximity to the first solder bump is composed of materials unwetted by the first solder bump,
• wherein a bottom portion of the first solder bump in proximity to the conductive layer is exposed to ambient.

A semiconductor package, comprising:

• a substrate;
• a conductive layer over the substrate;
• and
• a first solder bump electrically connected to the conductive layer,
• wherein a top surface of the conductive layer comprises:
• a first region in proximity to the first solder bump electrically coupled with the first solder bump;
• a second region in proximity to the first solder bump surrounding the first region in proximity to the first solder bump, and
• a metal derivative region in the first region, disposed in proximity to the second region,
• wherein the second region in proximity to the first solder bump is composed of materials unwetted by the first solder bump.