Semiconductor device and method of forming holes in substrate to interconnect top shield and ground shield

A semiconductor device, comprising:

• a substrate including a first shielding layer disposed within the substrate;
• a semiconductor die disposed over the first shielding layer, wherein the first shielding layer extends from under the semiconductor die beyond opposing sides of the semiconductor die;
• and
• a second shielding layer formed over the semiconductor die and extending into the substrate to the first shielding layer.

A semiconductor device, comprising:

• a substrate including a conductive layer disposed within the substrate;
• a semiconductor die disposed over the conductive layer, wherein the conductive layer extends from under the semiconductor die beyond opposing sides of the semiconductor die;
• and
• a shielding layer formed over the semiconductor die and extending into the substrate to the conductive layer.

A method of making a semiconductor device, comprising:

• providing a substrate including a conductive layer disposed within the substrate;
• disposing a semiconductor die over the conductive layer, wherein the conductive layer extends beyond opposing sides of the semiconductor die;
• forming an opening into the substrate extending to the conductive layer;
• and
• forming a shielding layer over the semiconductor die and into the opening to the conductive layer.