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AssigneeMitsubishi Electric Corporation
InventorsMamoru Terai, Shiori Idaka, Kei Yamamoto, Yoshiyuki Nakaki
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A plurality of semiconductor devices provided on a silicon carbide substrate are provided with electrode layers, respectively. The silicon carbide substrate is cut at a region of an exposed surface of the silicon carbide substrate that separates the electrode layers to individually separate the semiconductor devices. A stress relaxation resin is applied to each individually separated semiconductor device to cover the exposed surface at a peripheral end portion of that surface of the semiconductor device which has the electrode layer thereon. A semiconductor apparatus can thus be obtained that also allows a semiconductor device with a silicon carbide or similar compound semiconductor substrate to adhere to a sealant resin via large adhesive strength and thus allows the sealant resin to be less crackable, less peelable and the like by thermal stress caused in operation.
A method for producing a semiconductor apparatus, comprising the steps of:
A semiconductor apparatus comprising:
Dependencies are inferred from the claim text.