Semiconductor devices including through-silicon via
AssigneeSamsung Electronics Co., Ltd.
InventorsJin Ho An, Byung Lyul Park, Soyoung Lee, Gilheyun Choi
Life of this patent
Estimating the term…
Abstract
Semiconductor devices, and methods of fabricating a semiconductor device, include forming a via hole through a first surface of a substrate, the via hole being spaced apart from a second surface facing the first surface, forming a first conductive pattern in the via hole, forming an insulating pad layer on the first surface of the substrate, the insulating pad having an opening exposing the first conductive pattern, performing a thermal treatment on the first conductive pattern to form a protrusion protruding from a top surface of the first conductive pattern toward the opening, and then, forming a second conductive pattern in the opening.
Claims5
A semiconductor device, comprising:
- a substrate having a first surface and a second surface facing each other;
- a through-silicon via provided in a via hole penetrating the substrate;
- an integrated circuit spaced apart from the through-silicon via, the integrated circuit being on the first surface of the substrate;
- a first pad connected to the through-silicon via, the first pad being on the first surface of the substrate;
- and
- a second pad connected to the through-silicon via, the second pad being on the second surface of the substrate, wherein
- the through-silicon via includes a first conductive pattern filling the via hole, and a protrusion extending from the first conductive pattern into the first pad,
- the first pad includes a recess region extending from a bottom surface of the first pad toward a top surface of the first pad,
- the protrusion is in contact with the recess region of the first pad, and
- the protrusion has a top surface coplanar with the top surface of the first pad.
Dependencies are inferred from the claim text.