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AssigneeQUALCOMM Incorporated
InventorsJeffrey Junhao Xu, Junjing Bao, John Jianhong Zhu, Stanley Seungchul Song, Niladri Narayan Mojumder, Choh Fei Yeap
Estimating the term…
An integrated circuit device includes a first metal layer including aluminum. The integrated circuit device includes a second metal layer including an interconnect structure. The interconnect structure includes a layer of first material including aluminum. The integrated circuit device includes an inter-diffusion layer that includes aluminum. The inter-diffusion layer is proximate to the first metal layer and proximate to the layer of first material including aluminum. The integrated circuit device includes a self-forming barrier layer that includes aluminum. The self-forming barrier layer is proximate to a dielectric layer and proximate to the layer of first material including aluminum.
An integrated circuit device, comprising:
A method of forming an integrated circuit device, the method comprising:
A non-transitory computer-readable medium comprising processor-executable instructions that, when executed by a processor, cause the processor to:
Dependencies are inferred from the claim text.