Semiconductor sensor device and method of producing a semiconductor sensor device
AssigneeAms AG
InventorsFranz Schrank, Martin Schrems
Life of this patent
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Abstract
The semiconductor device comprises a substrate (1) of semiconductor material with a front side (4) and an opposite rear side (7), a wiring layer (5) at the front side (4), a further wiring layer (8) at the rear side (7), and a through-substrate via (3) connecting the wiring layer (5) and the further wiring layer (8). A hot plate (24) is arranged on or in the substrate, and a sensor layer (21) is arranged in the vicinity of the hot plate. A mold compound (14) is arranged on the rear side (7) above the substrate (1), a cavity (17) is formed in the mold compound (14) to accommodate the sensor layer (21), and the cavity (17) is covered with a membrane (15).
Claims9
A semiconductor sensor device, comprising:
- a substrate of semiconductor material with a front side and an opposite rear side;
- a wiring layer at the front side;
- a further wiring layer at the rear side;
- a through-substrate via connecting the wiring layer and the further wiring layer;
- a sensor layer arranged at the rear side and electrically connected with the further wiring layer;
- a mold compound arranged on the rear side, the mold compound being covered with a membrane, the mold compound and the membrane forming a cavity accommodating the sensor layer;
- and
- a hot plate being arranged on or in the substrate in the vicinity of the sensor layer,
- wherein the sensor layer is arranged above the substrate and the hot plate is arranged between the substrate and the sensor layer,
- wherein the membrane is impermeable to liquids and permeable to a gas,
- wherein the sensor layer is provided for a gas sensor,
- wherein a recess is formed in the substrate below the sensor layer, and the hot plate is arranged above the recess of the substrate, and
- wherein the hot plate is part of the further wiring layer, which is a structured metal layer arranged in an oxide or nitride of the semiconductor material.
A method of producing semiconductor devices, comprising:
- forming a plurality of semiconductor devices on a substrate of semiconductor material with a front side and an opposite rear side;
- arranging a wiring layer at the front side;
- arranging a further wiring layer at the rear side;
- forming through-substrate vias connecting the wiring layer and the further wiring layer;
- arranging a plurality of hot plates and sensor layers at the rear side;
- arranging a mold compound on the rear side above the substrate, the mold compound being structured to form a plurality of cavities for the accommodation of the sensor layers;
- and
- covering the cavities with a membrane,
- wherein the membrane is impermeable to liquids and permeable to a gas,
- wherein the sensor layers are provided for at least one gas sensor,
- wherein at least one recess is formed in the substrate below the sensor layers, and the hot plates are arranged above the at least one recess of the substrate, and
- wherein the hot plates are part of the further wiring layer, which is a structured metal layer arranged in an oxide or nitride of the semiconductor material.
A semiconductor sensor device, comprising:
- a substrate of semiconductor material;
- a sensor layer arranged above the substrate;
- a mold compound arranged above the sensor layer, the mold compound forming a cavity accommodating the sensor layer;
- a membrane covering the mold compound;
- and
- a hot plate arranged on or in the substrate in the vicinity of the sensor layer,
- wherein the sensor layer is arranged above the substrate and the hot plate is arranged between the substrate and the sensor layer,
- wherein the membrane is impermeable to liquids and permeable to a gas,
- wherein the sensor layer is provided for a gas sensor,
- wherein a recess is formed in the substrate below the sensor layer, and the hot plate is arranged above the recess of the substrate, and
- wherein the hot plate is part of the further wiring layer, which is a structured metal layer arranged in an oxide or nitride of the semiconductor material.
Dependencies are inferred from the claim text.