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US 9,543,242 B1Granted
Semiconductor package and fabricating method thereof
AssigneeAmkor Technology, Inc.
InventorsMichael Kelly, David Hiner, Ronald Huemoeller, Roger St. Amand
Life of this patent
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Abstract
A semiconductor device structure and a method for making a semiconductor device. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a thin fine-pitch redistribution structure.
Claims20
A semiconductor device comprising:
- a redistribution structure comprising:
- an upper redistribution layer comprising:
- a first dielectric layer comprising a first dielectric material;
- and
- a first conductive trace;
- and
- a lower redistribution layer comprising:
- a second dielectric layer comprising a second dielectric material;
- and
- a second conductive trace electrically coupled to the first conductive trace;
- a first semiconductor die attached to an upper side of the redistribution structure;
- a second semiconductor die attached to the upper side of the redistribution structure;
- a first mold material covering at least the upper side of the redistribution structure and a respective lateral side of each of the first and second semiconductor die;
- a substrate comprising an upper substrate side attached to a lower side of the redistribution structure;
- and
- a second mold material covering at least the upper substrate side, a lateral side of the first mold material, and a lateral side of the redistribution structure.
13 more elements
A semiconductor device comprising:
- a redistribution structure comprising:
- an upper redistribution layer comprising:
- a first dielectric layer comprising a first dielectric material;
- and
- a first conductive trace;
- a lower redistribution layer comprising:
- a second dielectric layer comprising a second dielectric material;
- and
- a second conductive trace electrically coupled to the first conductive trace;
- and
- a conductive pillar extending from the lower redistribution layer and attached to the second conductive trace;
- a first semiconductor die attached to an upper side of the redistribution structure;
- and
- a second semiconductor die attached to the upper side of the redistribution structure;
- a substrate attached to the conductive pillar;
- a first underfill material between the redistribution structure and the first semiconductor die and between the redistribution structure and the second semiconductor die;
- and
- a second underfill material between the substrate and the redistribution structure,
- wherein the first and second underfill materials are different materials.
16 more elements
Dependencies are inferred from the claim text.