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US 9,543,234 B2Granted
In-situ formation of silicon and tantalum containing barrier
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShiu-Ko JangJian, Szu-An Wu, Ting-Chun Wang
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Abstract
A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
Claims18
A device comprising:
- a first conductive feature;
- a tantalum-and-silicon containing layer comprising opposite portions on opposite sides of the first conductive feature, wherein the tantalum-and-silicon containing layer is a single layer comprising both tantalum and silicon;
- a dielectric material comprising opposite portions, wherein the first conductive feature and the tantalum-and-silicon containing layer are between the opposite portions of the dielectric material;
- a second conductive feature underlying and electrically connected to the first conductive feature;
- and
- a semiconductor substrate, wherein the first conductive feature, the tantalum-and-silicon containing layer, and the dielectric material penetrate through the semiconductor substrate, wherein the tantalum-and-silicon containing layer has a first surface contacting the second conductive feature, and a second surface opposite to the first surface, and the second surface is coplanar with a surface of the semiconductor substrate.
3 more elements
A device comprising:
- a semiconductor substrate;
- an interconnect structure comprising a plurality of metal layers, wherein the interconnect structure is on a first side of the semiconductor substrate;
- an opening extending from a second side of the semiconductor substrate to reach one of the plurality of metal layers;
- a dielectric layer disposed in the opening, wherein the one of the plurality of metal layers is exposed through a portion of the opening between opposite portions of the dielectric layer;
- and
- a tantalum silicon nitride layer encircled by the dielectric layer, wherein the tantalum silicon nitride layer has a first end contacting the one of the plurality of metal layers, and a second end coplanar with a surface of the semiconductor substrate.
3 more elements
A device comprising:
- a dielectric layer with an opening therein;
- a tantalum silicon nitride layer contacting sidewalls of the dielectric layer, with the sidewalls facing the opening, wherein the tantalum silicon nitride layer has a first atomic ratio of tantalum atoms to nitrogen atoms;
- a tantalum nitride layer encircled by the tantalum silicon nitride layer, wherein the tantalum nitride layer has a second atomic ratio of tantalum atoms to nitrogen atoms, and the first atomic ratio is equal to the second atomic ratio;
- a first conductive feature encircled by the tantalum nitride layer;
- and
- a second conductive feature underlying the dielectric layer, wherein the first conductive feature and a bottom end of the tantalum silicon nitride layer are in physical contact with a top surface of the second conductive feature.
3 more elements
Dependencies are inferred from the claim text.