Semiconductor package structure and method for forming the same
AssigneeMediatek Inc.
InventorsCheng-Chou Hung, Ming-Tzong Yang, Tung-Hsing Lee, Wei-Che Huang, Yu-Hua Huang, Tzu-Hung Lin
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Abstract
A semiconductor package structure and method for forming the same are provided. The semiconductor package structure includes a substrate and the substrate has a front side and a back side. The semiconductor package structure includes a through silicon via (TSV) interconnect structure formed in the substrate; and a first guard ring doped region and a second guard ring doped region formed in the substrate, and the first guard ring doped region and the second guard ring doped region are adjacent to the TSV interconnect structure.
Claims18
A semiconductor package structure, comprising
- a substrate, wherein the substrate has a front side and a back side;
- a through silicon via (TSV) interconnect structure formed in the substrate;
- and
- a first guard ring doped region and a second guard ring doped region formed in the substrate, wherein the first and the second guard ring doped regions are adjacent to the TSV interconnect structure, wherein the first guard ring doped region and the second guard ring doped region have different conductive types.
Dependencies are inferred from the claim text.