Method of singulating semiconductor devices using isolation trenches
AssigneeInfineon Technologies AG
InventorsAndre Schmenn, Damian Sojka, Isabella Goetz
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Abstract
In accordance with an embodiment of the present invention, a method for forming a semiconductor device includes forming a device region in a substrate. The device region extends continuously from one sidewall of the substrate to an opposite sidewall of the substrate. The method further includes forming trenches in the substrate. The trenches divide the device region into active regions. The method also includes singulating the substrate by separating the substrate along the trenches.
Claims26
A method for forming a semiconductor device, the method comprising:
- forming a device region in a substrate, the device region extending continuously from one sidewall of the substrate to an opposite sidewall of the substrate;
- forming trenches in the substrate, the trenches dividing the device region into active regions;
- forming a dielectric material within the trenches, wherein each of the trenches comprises a sidewall including an upper portion and a lower portion, wherein the thickness of the dielectric material on the sidewall decreases along the sidewall from the upper portion towards the lower portion;
- forming a front side metallization layer over the device region, the front side metallization extending into the trenches and covering a top portion of the dielectric material within the trenches;
- and
- singulating the substrate by separating the substrate along the trenches.
A method for forming a semiconductor device, the method comprising:
- forming a device region in a substrate before using an active mask step;
- after forming the device region, forming gaps along dicing channels in the substrate, the gaps dividing the device region into a plurality of active regions;
- forming a dielectric material within the gaps, wherein each of the gaps comprises a sidewall including an upper portion and a lower portion, wherein the thickness of the dielectric material on the sidewall tapers along the sidewall;
- forming a front side metallization layer over the device region, the front side metallization extending into the gaps and covering a top portion of the dielectric material within the gaps;
- and
- using the gaps to singulate the substrate.
A method for forming a semiconductor device, the method comprising:
- forming a device region in a substrate, the device region extending continuously from one sidewall of the substrate to an opposite sidewall of the substrate;
- forming trenches in the substrate, the trenches dividing the device region into active regions;
- depositing a dielectric material liner within the trenches, wherein each of the trenches comprises a sidewall including an upper portion and a lower portion, wherein the thickness of the dielectric material liner on the sidewall decreases along the sidewall from the upper portion towards the lower portion such that a lowermost portion of the sidewalls is exposed after the depositing;
- forming a front side metallization layer over the device region, the front side metallization extending into the trenches and covering a top portion of the dielectric material liner within the trenches;
- and
- singulating the substrate by separating the substrate along the trenches.
Dependencies are inferred from the claim text.