Method for manufacturing semiconductor device
AssigneeLongitude Semicondutor S.A.R.L.
InventorsYoshihiro Saeki, Nobuaki Hoshi
Life of this patent
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Abstract
In order to provide a semiconductor device that includes a conductive layer on one surface of a semiconductor substrate with an insulating layer therebetween, a bump on the other surface of the semiconductor substrate, and a through-electrode through the semiconductor substrate connecting the conductive layer with the bump, a through-hole is formed from the other surface of the semiconductor substrate to be connected to the conductive layer, a seed metal film is formed on the through-hole and the other surface, a photoresist is formed thereon, a mask layer is formed by processing the photoresist with a pattern larger than the through-hole, a plated film is grown by electrolytic plating so as to integrally form the through-electrode and a part of the bump.
Claims15
A method for manufacturing a semiconductor device including a first semiconductor chip and a second semiconductor chip, comprising:
- forming each of the first and second semiconductor chips by:
- forming a trench on one surface of a semiconductor substrate, the trench being connected to a conductive layer formed over the other surface of the semiconductor substrate, and an insulating layer being interposed between the conductive layer and the semiconductor substrate;
- depositing a seed metal layer on the one surface of the semiconductor substrate and on an inner surface of the trench;
- forming a plating mask layer having an opening larger than the trench in diameter and exposing an opening of the trench on the one surface of the semiconductor substrate;
- and
- growing a first plated film in the trench and the opening of the plating mask layer by electrolytic plating using the plating mask layer as a mask so as to integrally form a first portion including an embedded portion in the trench and a second portion protruding from the one surface of the semiconductor substrate in the opening of the plating mask layer, wherein an uppermost surface of the first plated film protrudes from the one surface of the semiconductor substrate, and is substantially flat and continuous after growing of said first plated film;
- and
- stacking the first and second semiconductor chips, the first plated film of the first semiconductor chip being connected to a solder ball that directly contacts the conductive layer of the second semiconductor chip.
A method for manufacturing a semiconductor device including a first semiconductor chip and a second semiconductor chip, comprising:
- forming the first semiconductor chip by:
- forming a trench on a surface of a semiconductor substrate,
- depositing a seed metal layer on the surface of the semiconductor substrate and on an inner surface of the trench, and
- forming an electrode that comprises a single piece of conductive material including a first portion and a second portion by electrolytic plating, the first portion including an embedded portion in the trench, the second portion protruding from the surface of the semiconductor substrate, wherein the first portion of the electrode is formed under a film-growing condition d/r2≦R/r1, where R and d are a radius and depth of the trench after the seed metal layer is formed, respectively, r1 is an average film-growing rate horizontally growing around an opening of the trench, and r2 is an average film-growing rate upwardly growing in the depth direction of the trench, and wherein an uppermost surface of the second portion is substantially flat and continuous after forming the electrode;
- and
- stacking the first and second semiconductor chips, the second portion of the conductive material of the first semiconductor chip being connected to a solder ball that directly contacts the second semiconductor chip.
Dependencies are inferred from the claim text.