Method of fabricating semiconductor device having contact structures

A method of fabricating a semiconductor device, the method comprising:

• forming a device isolation region defining an active region on a substrate;
• forming gate structures intersecting the active region and extending parallel to each other in a first direction in the substrate;
• forming interconnection structures extending parallel to each other in a second direction perpendicular to the first direction on a substrate;
• forming an intermediate interlayer insulating layer filling an area between the interconnection structures that intersect the gate structures and a sacrificial layer filling an area between the interconnection structures that are between the gate structures;
• removing the sacrificial layer and forming a contact hole exposing end portion of the active region;
• performing a coating process and forming a liquid state silicon source material layer filling the contact hole;
• performing a first annealing process, curing the liquid state silicon source material layer, and forming an amorphous silicon layer;
• and
• crystallizing the amorphous silicon layer and forming a contact plug.

A method of fabricating a semiconductor device, the method comprising:

• forming gate structures extending parallel to each other in a substrate;
• forming interconnection structures intersecting the gate structures and extending parallel to each other on the substrate, the interconnection structures including first portions that do not intersect the gate structures and second portions that intersect the gate structures;
• filling an area between the first portions of the interconnection structures with a silicon oxide layer;
• filling an area between the second portions of the interconnection structures with a silicon nitride layer;
• removing the silicon oxide layer between the first portions;
• filling an area between the first portions of the interconnection structures on the substrate by performing a coating process using a liquid state silicon source material layer;
• converting the liquid state silicon source material layer into an amorphous silicon layer;
• forming amorphous silicon patterns having upper surfaces at lower levels than upper surfaces of the interconnection structures by partially removing the amorphous silicon layer;
• and
• forming polysilicon patterns by crystallizing the amorphous silicon patterns.