Method for forming three-dimensional interconnection, circuit arrangement comprising three-dimensional interconnection, and metal film-forming composition for three-dimensional interconnection

A method for forming a three-dimensional interconnection in which a contact plug is formed within a through hole provided in a substrate or an electrically insulative film and an upper wire formed on an upper side of the substrate or the electrically insulative film and a lower wire formed on a lower side of the substrate or the electrically insulative film are electrically connected to one another by the contact plug, the method comprising:

• forming a through hole or a blind via hole in the substrate or the electrically insulative film;
• forming a bottom seed layer by depositing a conductor by a vapor phase deposition process on a lower end side of the through hole or on a bottom surface of the blind via hole;
• forming a coating film covering an upper surface of the substrate or the electrically insulative layer, an inner wall of the through hole or the blind via hole, and an upper surface of the bottom seed layer by applying a metal film-forming composition containing at least one of a salt of and a particle of a metal selected from Group 10 and Group 11 of the Periodic Table to the substrate or the electrically insulative film provided thereon with the bottom seed layer;
• forming a metal film by heating the coating film,
• plating by filling up the through hole or the blind via hole by depositing a conductor on the metal film by a plating process using the metal film as a seed layer;
• and
• removing, by a chemical mechanical polishing process, an excess conductor deposited in the plating.