Long-term heat treated integrated circuit arrangements and methods for producing the same
AssigneeInfineon Technologies AG
InventorsOliver Aubel, Wolfgang Hasse, Martina Hommel, Heinrich Koerner
Life of this patent
Estimating the term…
Abstract
An explanation is given of, inter alia, methods in which the barrier material is removed at a via bottom or at a via top area by long-term heat treatment. Concurrently or alternatively, interconnects are coated with barrier material in a simple and uncomplicated manner by means of the long-term heat treatment.
Claims14
A method for processing an integrated circuit arrangement comprising a via conductive structure disposed over an interconnect and a barrier material layer disposed between the via conductive structure and the interconnect, the barrier material layer comprising an electrically conductive barrier material, the method comprising:
- removing a portion of the barrier material layer, the portion located between the via conductive structure and the interconnect, by performing one or more heat treatments, wherein in response to the one or more heat treatments, the barrier material layer at least partially diffuses at least into the interconnect along grain boundaries of the interconnect leaving no part of the barrier material layer between the via conductive structure and the interconnect.
A method for processing an integrated circuit arrangement comprising an insulating layer, the method comprising:
- forming an opening in the insulating layer;
- forming an electrically conductive barrier layer on sidewalls and a bottom surface of the opening;
- forming a conductive structure by depositing a metal in the opening;
- forming a dielectric barrier layer at least over a top surface of the conductive structure, wherein the top surface of the conductive structure faces away from the bottom surface of the opening;
- coating at least the top surface of the conductive structure by performing one or more heat treatments, wherein in response to the one or more heat treatments, barrier material from the electrically conductive barrier layer transports by interface diffusion along an interface between the conductive structure and the dielectric barrier layer.
Dependencies are inferred from the claim text.