US 9,543,198 B2 · Structure and method for forming interconnect structure

Abstract

A method for forming a semiconductor structure includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. An opening is formed in the dielectric layer. A conductive line is formed in the opening, wherein the conductive line has an open void formed therein. A sealing metal layer is formed overlying the conductive line, the dielectric layer, and the open void, wherein the sealing metal layer substantially fills the open void. The sealing metal layer is planarized so that a top surface thereof is substantially level with a top surface of the conductive line. An interconnect feature is formed above the semiconductor substrate, wherein the interconnect feature is electrically coupled with the conductive line and the sealing metal layer-filled open void.

Claims20

Dependent claims

A semiconductor structure, comprising:

a first dielectric layer on a semiconductor substrate, the first dielectric layer having a conductive line with an open void formed entirely in an upper half of the conductive line;
a sealing metal layer substantially filling the open void, the sealing metal layer having a top surface thereof substantially level with a top surface of the conductive line;
an interconnect feature embedded in a second dielectric layer;
a diffusion barrier layer interposed between the second dielectric layer and the interconnect feature;
and
wherein the interconnect feature directly contacts the top surface of the sealing metal layer.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

14/593,363Filed 9 Jan 2015 · division

Priority

30 Aug 2013

Published

US 2015/0123279 A17 May 2015

Granted

10 Jan 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10W 20/036
In openings in dielectrics: the barrier, adhesion or liner layers being within a main fill metal
H10W 20/031
Manufacture or treatment: of conductive parts of the interconnections
H10W 20/032
Of conductive parts of the interconnections: of conductive barrier, adhesion or liner layers
H10W 20/035
In openings in dielectrics: combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers

Structure and method for forming interconnect structure

Life of this patent

Structure and method for forming interconnect structure

Life of this patent

Abstract

Claims20