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US 9,543,196 B2Granted
Methods of fabricating semiconductor devices using nanowires
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun Park, Dong-Hyun Im, Soon-Gun Lee, Jong-Myeong Lee, Han-Jin Lim
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Abstract
Methods of fabricating a semiconductor device may include forming guide patterns exposing base patterns, forming first nanowires on the base patterns by performing a first nanowire growth process, forming a first molding insulating layer between the first nanowires, forming holes exposing surfaces of the base patterns by removing the nanowires, and forming first electrodes including a conductive material in the holes.
Claims15
A method of forming a semiconductor device, the method comprising:
- forming guide patterns exposing base patterns;
- forming first nanowires on the base patterns by performing a first nanowire growth process;
- forming a first molding insulating layer between the first nanowires;
- forming holes exposing surfaces of the base patterns by removing the first nanowires;
- and
- forming first electrodes comprising a conductive material in the holes.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming guide patterns exposing base patterns;
- forming first nanowires on the base patterns;
- forming a first molding insulating layer between the first nanowires;
- recessing an upper surface of the first molding insulating layer to be lower than upper surfaces of the first nanowires;
- forming a first supporter exposing the upper surfaces of the first nanowires and surrounding side surfaces of the first nanowires on the first molding insulating layer;
- forming storage holes exposing surfaces of the base patterns by removing the first nanowires;
- and
- forming first electrodes comprising a conductive material in the storage holes.
5 more elements
Dependencies are inferred from the claim text.