Semiconductor process
AssigneeUnited Microelectronics Corp.
InventorsWei-Hsin Liu, Bin-Siang Tsai
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Abstract
A semiconductor process includes the following steps. Metal patterns are formed on a first dielectric layer. A modifiable layer is formed to cover the metal patterns and the first dielectric layer. A modification process is performed to modify a part of the modifiable layer on top sides of the metal patterns, thereby top masks being formed. A removing process is performed to remove a part of the modifiable layer on sidewalls of the metal patterns but preserve the top masks. A dielectric layer having voids under the top masks and between the metal patterns is formed. Moreover, the present invention also provides a semiconductor structure formed by said semiconductor process.
Claims12
A semiconductor process, comprising:
- forming metal patterns on a first dielectric layer;
- forming a modifiable layer to cover the metal patterns and the first dielectric layer;
- performing a modification process to modify a part of the modifiable layer on top sides of the metal patterns, thereby top masks being formed;
- performing a removing process to remove a part of the modifiable layer on sidewalls of the metal patterns but preserve the top masks;
- and
- forming a dielectric layer having voids under the top masks and between the metal patterns.
Dependencies are inferred from the claim text.