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US 9,543,194 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorKiyomitsu Yoshida
Life of this patent
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Abstract
In one embodiment, a semiconductor device includes a first insulator, and conductors and second insulators alternately provided on the first insulator. Each second insulator of the second insulators has a first side face adjacent to one of the conductors via a first air gap, a second side face adjacent to one of the conductors via a second air gap, first lower faces in contact with the first insulator, and second lower faces provided above the first insulator via third air gaps.
Claims11
A semiconductor device comprising:
- a first insulator;
- and
- conductors and second insulators alternately provided on the first insulator,
- each second insulator of the second insulators comprising:
- a first side face adjacent to one of the conductors via a first air gap;
- a second side face adjacent to one of the conductors via a second air gap;
- first lower faces in contact with the first insulator;
- and
- second lower faces provided above the first insulator via third air gaps, the third air gaps being connected to the first and second air gaps.
6 more elements
Dependencies are inferred from the claim text.