US 9,543,191 B2 · Wiring structure having interlayer insulating film and wiring line without a barrier layer between

Abstract

Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C).

Claims3

Dependent claims

A semiconductor device comprising:

an insulating film formed with a fluorinated carbon film and having a groove;
and
a wiring member formed of copper which is buried in the groove of the insulating film to form a wiring line of a damascene structure,
wherein at least a portion of a front surface of the insulating film that contacts the wiring member includes a carbon-rich layer in which a carbon content is higher than a fluorine content.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

14/380,306Filed 21 Feb 2013

Priority

JP 2012-03642422 Feb 2012

Published

US 2015/0041983 A112 Feb 2015

Granted

10 Jan 2017

Term ends

Not estimatedThe source records don’t support an estimate.

Classification22 codes

H10W 20/01
Interconnections in chips, wafers or substrates: manufacture or treatment
H01J 37/32192
Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources: microwave generated discharge
H10P 14/40
Formation of materials, e.g. in the shape of layers or pillars: of conductive or resistive materials
H10P 14/6336
Using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition: in the presence of a plasma [PECVD]

Wiring structure having interlayer insulating film and wiring line without a barrier layer between

Life of this patent

Wiring structure having interlayer insulating film and wiring line without a barrier layer between

Life of this patent

Abstract

Claims3