FinFET source-drain merged by silicide-based material

A method comprising:

• forming a first fin and a second fin on a substrate, the first fin being adjacent to the second fin;
• forming a gate structure over a first portion of both the first fin and the second fin, the gate structure not covering a second portion of both the first fin and the second fin;
• forming a first epitaxial layer surrounding the second portion of the first fin and a second epitaxial layer surrounding the second portion of the second fin, wherein a gap exists between the first epitaxial layer and the second epitaxial layer such that the first epitaxial layer and the second epitaxial layer are unmerged, and wherein the first epitaxial layer and the second epitaxial layer include silicon;
• depositing a first metal layer above and in direct contact with a top portion of the first epitaxial layer and a top portion of the second epitaxial layer until the gap between the first epitaxial layer and the second epitaxial layer is closed, wherein the first metal layer extends from the first epitaxial layer to the second epitaxial layer, and wherein a space remains below the first metal layer between the first epitaxial layer and the second epitaxial layer;
• depositing a second metal layer above and in direct contact with the first metal layer;
• conducting a laser-based anneal treatment on the first metal layer to promote a reaction between the first and the second epitaxial layers and the first metal layer to form a continuous silicide layer that merges the first epitaxial layer and the second epitaxial layer, wherein a portion of the continuous silicide layer between the first epitaxial layer and the second epitaxial layer is substantially thicker than a portion of the continuous silicide layer in contact with the first epitaxial layer and the second epitaxial layer;
• and
• removing the second metal layer from above the silicide layer.