Etching method
AssigneeTokyo Electron Limited
InventorRyoichi Yoshida
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Abstract
An etching method is provided for performing an etching process on an etching target film arranged on a substrate. The etching method includes the steps of supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas; performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas; and etching the etching target film that has undergone the treatment using a plasma generated from an etching gas.
Claims3
An etching method for performing an etching process on an etching target film arranged on a substrate, the etching method comprising the steps of:
- supplying a treatment gas including a halogen-containing gas, hydrogen gas, an inert gas, and oxygen gas, and performing a treatment on a patterned mask arranged on the etching target film using a plasma generated from the treatment gas;
- and
- etching the etching target film that has undergone the treatment using a plasma generated from an etching gas,
- wherein the treatment gas includes carbon dioxide.
Dependencies are inferred from the claim text.