Method of planarizating film
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYing-Hao Su, Yu-Lun Liu, Chi-Kang Chang, Shih-Chi Fu, Kuei-Shun Chen, Chloe Hsu
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Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a flowable-material (FM) layer over a substrate. The substrate has a first region and a second region. A top surface of the FM layer in the first region is higher than a top surface of the FM layer in the second region. The method also includes forming a plurality of trenches in the FM layer in the first region and performing annealing process to reflow the FM layer, wherein the plurality of trenches are filled with the FM layer.
Claims20
A method comprising:
- forming a flowable-material (FM) layer over a substrate, the substrate having a first region and a second region, wherein a top surface of the FM layer in the first region is higher than a top surface of the FM layer in the second region;
- forming a plurality of trenches in the FM layer in the first region;
- and
- performing annealing process to reflow the FM layer, wherein the plurality of trenches are filled with the FM layer.
A method comprising:
- providing a substrate having a plurality of features protruding from the substrate;
- forming a photoresist layer over a substrate, including over the plurality of features, wherein a top surface of the photoresist layer in a first region of the substrate is higher than a top surface of the photoresist layer in a second region of the substrate;
- forming a plurality of trenches in the photoresist layer in the first region;
- and
- reflowing the photoresist layer to fill in the plurality of trenches.
A method comprising:
- forming a flowable-material (FM) layer over a first region of a substrate and a second region of the substrate, wherein a top surface of the FM layer in the first region is higher than a top surface of the FM layer in the second region;
- forming a patterned photoresist layer over the FM layer;
- forming a plurality of trenches in the FM layer in the first region through the patterned photoresist layer;
- and
- performing annealing process to reflow the FM layer into the plurality of trenches.
Dependencies are inferred from the claim text.