Reducing defects in patterning processes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChing-Yu Chang
Life of this patent
Estimating the term…
Abstract
A method includes forming a mask layer forming a first photo resist over the mask layer, performing a first patterning step on the first photo resist, and performing a first etching step on the mask layer using the first photo resist as an etching mask. The first photo resist is then removed. The method further includes forming a particle-fixing layer on a top surface and sidewalls of the mask layer, forming a second photo resist over the particle-fixing layer and the mask layer, performing a second patterning step on the second photo resist, and performing a second etching step on the particle-fixing layer and the mask layer using the second photo resist as an etching mask. The particle-fixing layer is etched through. A target layer underlying the mask layer is etched using the mask layer as an etching mask.
Claims20
A method comprising:
- forming a mask layer over an underlying layer;
- forming a first patterned photo resist over the mask layer;
- performing a first etching step on the mask layer using the first patterned photo resist as an etching mask, thereby forming a first etched mask layer;
- removing the first patterned photo resist;
- forming a particle-fixing layer contacting the first etched mask layer, wherein the particle-fixing layer fills a lower portion of a gap between two neighboring remaining portions of the first etched mask layer, wherein an upper portion of the gap is unfilled by the particle-fixing layer;
- forming a second patterned photo resist over the particle-fixing layer and the first etched mask layer;
- performing a second etching step on the particle-fixing layer and the mask layer using the second patterned photo resist as an etching mask, thereby forming a second etched mask layer;
- patterning the underlying layer using the second etched mask layer as a mask;
- and
- removing the second etched mask layer.
A method comprising:
- forming a mask layer over a target layer;
- forming a first patterned mask layer over the mask layer;
- performing a first etching step to pattern the mask layer using the first patterned mask layer as a mask, wherein remaining portions of the mask layer form second patterned mask layer, inorganic-containing particles from the mask layer and the first patterned mask layer remaining on the second patterned mask layer after the first etching step;
- removing the first patterned mask layer;
- forming a particle-fixing layer contacting a top surface and sidewalls of the second patterned mask layer;
- performing a patterning step to pattern the particle-fixing layer and the second patterned mask layer using a same etching mask, wherein remaining portions of the second patterned mask layer form a third patterned mask layer;
- etching the target layer using the third patterned mask layer as an etching mask;
- and
- removing the third patterned mask layer.
A method comprising:
- forming a mask layer over and contacting a target layer, wherein an entirety of the mask layer is a single layer;
- forming a first stacked layer over and contacting the mask layer, wherein the first stacked layer comprises:
- a first under layer over the mask layer;
- and
- a first middle layer over the first under layer, wherein the first middle layer comprises an inorganic material;
- patterning the first stacked layer to form a first patterned stack;
- performing a first etching on the mask layer using the first patterned stack as an etching mask;
- removing the first patterned stack;
- forming a particle-fixing layer physically contacting sidewalls of the mask layer, wherein the particle-fixing layer fills a lower portion of a gap between two neighboring remaining portions of the mask layer, wherein an upper portion of the gap is unfilled by the particle-fixing layer;
- forming a second stacked layer over the mask layer, wherein the second stacked layer comprises:
- a second under layer over the mask layer;
- and
- a second middle layer over the second under layer;
- patterning the second stacked layer to form a second patterned stack;
- etching the particle-fixing layer and the mask layer using the second patterned stack as an etching mask;
- after etching the particle-fixing layer and the etched mask layer, etching the target layer using the etched mask layer as a mask;
- and
- removing the mask layer.
Dependencies are inferred from the claim text.