Method for processing a carrier, a method for operating a plasma processing chamber, and a method for processing a semiconductor wafer
AssigneeInfineon Technologies AG
InventorsMichael Renner, Lothar Brencher
Life of this patent
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Abstract
According to various embodiments, a method for processing a carrier may include: performing a dry etch process in a processing chamber to remove a first material from the carrier by an etchant, the processing chamber including an exposed inner surface including aluminum and the etchant including a halogen; and, subsequently, performing a hydrogen plasma process in the processing chamber to remove a second material from at least one of the carrier or the inner surface of the processing chamber.
Claims18
A method for processing a carrier, the method comprising:
- performing a dry etch process in a processing region of a processing chamber to remove a first material from the carrier by an etchant, the processing chamber comprising an exposed inner surface comprising aluminum and the etchant comprising a halogen;
- and, subsequently,
- performing a hydrogen plasma ash process in the same processing region of the processing chamber, thereby stripping a resist mask from the carrier, wherein the hydrogen plasma process is substantially free of oxygen.
A method for operating a plasma processing chamber, the method comprising:
- disposing a carrier in a plasma processing chamber, the carrier comprising at least one portion of a first material to be removed from the carrier in a first plasma process;
- and the carrier further comprising a resist layer to be removed from the carrier in a second plasma process;
- and subsequently
- performing the first plasma process in the plasma processing chamber to provide the first plasma, thereby removing the at least one portion of the first material, wherein the plasma processing chamber comprises an exposed inner surface comprising aluminum and the first plasma is provided from a halogen containing gas;
- and, subsequently,
- in-situ performing the second plasma process in the plasma processing chamber to provide a second plasma, thereby removing the resist layer, wherein the second plasma is provided from gaseous hydrogen, wherein the second plasma process is substantially free of oxygen.
A method for processing a semiconductor wafer, the method comprising:
- inserting a semiconductor wafer into a processing region of a plasma processing chamber, the semiconductor wafer comprising a patterned resist layer, the patterned resist layer exposing a portion of a material to be removed;
- performing a first plasma process in the processing region of the plasma processing chamber to remove the exposed portion of the material by a first plasma, wherein the first plasma is provided from a halogen containing gas by a plasma source coupled to the plasma processing chamber;
- and, subsequently,
- performing a second plasma process in the same processing region of the plasma processing chamber, thereby completely removing the patterned resist layer from the semiconductor wafer by a second plasma, wherein the second plasma is provided from gaseous hydrogen by the same plasma source.
Dependencies are inferred from the claim text.