Method for growing graphene on surface of gate electrode and method for growing graphene on surface of source/drain surface

A method for growing graphene on a surface of a gate electrode, comprising the following steps:

• (1) providing a substrate that includes a gate electrode, wherein the gate electrode contains metallic copper;
• (2) providing a solid-state carbon source and a solvent, dissolving the solid-state carbon source in the solvent to form a mixture solution, uniformly coating the mixture solution on the substrate that includes the gate electrode to form an organic film covering the gate electrode and the substrate, followed by baking at 50° C.-100° C. in vacuum for 1-4 h to remove the solvent within the organic film;
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• (3) positioning the substrate that is covered with the organic film in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber, introducing H2 gas, wherein a flow rate of H2 gas is 10-200 SCCM, increasing a temperature inside the PECVD reaction chamber to 400° C.-700° C., an overall pressure of the PECVD reaction chamber being kept at 23 Torr, wherein the solid-state carbon source of the organic film is converted in the PECVD reaction chamber into graphene and reaction time is 5-60 min, then the supply of H2 gas is cut off and the PECVD facility shut down to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the gate electrode of the substrate.

A method for growing graphene on a surface of a source/drain electrode, comprising the following steps:

• (1) providing a substrate that includes a source/drain electrode, wherein the source/drain electrode contains metallic copper;
• (2) positioning the substrate that includes the source/drain electrode in a plasma enhanced chemical vapor deposition (PECVD) reaction chamber and introducing H2 gas for cleaning, increasing a temperature inside the PECVD reaction chamber to 300° C.-400° C., a gas flow rate of H2 gas being 10 SCCM to 200 SCCM, an overall pressure of the PECVD reaction chamber being kept between 1 to 10 Pa, radio frequency (RF) power being 100-800 W;
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• (3) continuously introducing H2 gas into the PECVD reaction chamber and simultaneously introducing a hydrocarbon gas so as to grow graphene on a surface of the source/drain electrode, wherein a ratio of flow rate between the hydrocarbon gas and H2 gas is between 10:1 and 1:50, growth time of graphene being controlled within 1-10 min, then shutting down the PECVD facility to have the facility return to room temperature, thereby obtaining a graphene film covering the surface of the source/drain electrode.