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US 9,543,150 B2Granted
Systems and methods for forming ultra-shallow junctions
AssigneeLam Research Corporation
InventorsYunsang Kim, YounGi Hong, Ivan Berry
Life of this patent
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Abstract
A method for forming a junction on a substrate includes removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer; and nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer.
Claims27
A method for forming a junction on a substrate, comprising:
- removing a native oxide layer of a bulk material;
- doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer;
- and
- nano-doping the hydrogen-doped outer layer using one of boron or phosphorous to a target junction depth to create a nano-doped layer.
1 more element
A method for forming a junction on a substrate, comprising:
- removing a native oxide layer of a bulk material of the substrate;
- eliminating fluorine residue on a surface of the bulk material;
- doping an outer layer of the bulk material with molecular hydrogen to create a hydrogen-doped outer layer;
- oxidizing the hydrogen-doped outer layer to create an oxidized outer layer;
- removing at least part of the oxidized outer layer;
- and
- nano-doping using one of phosphorous or arsenic to a target junction depth to create a doped layer.
4 more elements
Dependencies are inferred from the claim text.