Photoresist and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Yu Liu, Ching-Yu Chang, Chien-Chih Chen, Yen-Hao Chen
Life of this patent
Estimating the term…
Abstract
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.
Claims22
A method comprising:
- dispensing an anti-reflective material over a semiconductor substrate to form an anti-reflective coating layer, the anti-reflective material having a first concentration of a floating additive, wherein the floating additive further comprises:
- a group to be decomposed;
- and
- a fluorine group bonded to the group to be decomposed;
- forming a floating region adjacent to a top surface of the anti-reflective coating layer, the floating region having a second concentration of the floating additive greater than the first concentration and a thickness of at least 100 Å;
- and
- placing, exposing and developing a photoresist over the floating region.
A method of manufacturing a semiconductor device, the method comprising:
- applying a middle layer to a bottom layer over a substrate;
- applying an adhesion promotion layer to the middle layer, wherein the applying the adhesion promotion layer is performed in a separate step than the applying the middle layer;
- applying a photoresist to the adhesion promotion layer;
- and
- exposing and developing the photoresist.
A method of manufacturing a semiconductor device, the method comprising:
- applying a middle layer to a bottom layer, the bottom layer being over a substrate, wherein the middle layer comprises a first cross-linking group;
- applying a photoresist to the middle layer, wherein the photoresist comprises a second cross-linking group;
- cross-linking the first cross-linking group to the second cross-linking group;
- and
- exposing and developing the photoresist after the cross-linking the first cross-linking group to the second cross-linking group.
A method of manufacturing a semiconductor device, the method comprising:
- applying a middle layer to a substrate having a bottom layer;
- performing a phase separation within the middle layer to form a separation region along a top surface of the middle layer;
- adhering a photoresist to the separation region;
- and
- exposing and developing the photoresist.
Dependencies are inferred from the claim text.