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US 9,543,144 B2Granted
Vapor deposition of chalcogenide-containing films
AssigneeL'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsHana Ishii, Nathanaelle Schneider, Julien Gatineau
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Abstract
Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions are disclosed.
Claims17
A method of forming a chalcogenide-containing film, the method comprising introducing into a reactor having a substrate therein a vapor of a chalcogenide-containing film forming precursor having the following formula:
- (RO)2M
- wherein, M is S, Se, or Te;
- E is Si or Ge;
- and R is independently selected from H, a linear or branched C1-C6 alkyl, C1-C6 alkoxy, C1-C6 alkylsilyl, C1-C6 alkygermyl, C1-C6 perfluorocarbon, C1-C6 alkylsiloxy, C1-C6 alkylamino, alkylsilylamino, or aminoamido group;
- and
- depositing at least part of the chalcogenide-containing film forming precursor onto the substrate.
3 more elements
Dependencies are inferred from the claim text.