Method for curing flowable layer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Ming Liao, Ker-Hsun Liao, Chun-Ou Liu, Su-Horng Lin
Life of this patent
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Abstract
Methods for forming a semiconductor structure are provided. The method for forming a semiconductor structure includes forming a flowable layer over a substrate and heating the flowable layer to form a cured layer in a curing process. In addition, the curing process is performed under a pressure of over 2 atmospheres, and the flowable layer reacts with precursors in the flowable layer during the curing process.
Claims18
A method for forming a semiconductor structure, comprising:
- forming a flowable layer over a substrate;
- driving precursors into the flowable layer before a curing process under a pressure of over 2 atmospheres, wherein the flowable layer has a top portion and a bottom portion and the bottom portion is disposed between the top portion and the substrate such that the precursors enter and react with the top portion and with the bottom portion, wherein the precursors comprise O2, H2O, H2O2, O3 or a combination thereof;
- and
- heating the flowable layer to form a cured layer in the curing process, wherein the curing process is performed under a pressure of over 2 atmospheres, the flowable layer reacts with the precursors in the flowable layer during the curing process, and after the cured layer is formed, no heating process is performed to the cured layer.
A method for forming a semiconductor structure, comprising:
- forming a flowable layer over a substrate, wherein the flowable layer has a top portion and a bottom portion and the bottom portion is disposed between the top portion and the substrate;
- driving precursors into the flowable layer under a pressure of over 2 atmospheres such that the precursors enter and react with the top portion and with the bottom portion of the flowable layer, wherein the precursors comprise O2, H2O, H2O2, O3, or a combination thereof;
- and
- heating the flowable layer to form a cured layer in a curing process,
- wherein the curing process is performed under a pressure of over 2 atmospheres, the flowable layer reacts with the precursors in the flowable layer during the curing process, and after the cured layer is formed, no heating process is performed to the cured layer.
A method for forming a semiconductor structure, comprising:
- forming a flowable layer over a substrate, wherein the flowable layer has a top portion and a bottom portion and the bottom portion is disposed between the top portion and the substrate;
- transferring the substrate into a heating chamber, wherein precursors are driven into the top portion and the bottom portion of the flowable layer by a high-pressure process, and the precursors comprise O2, H2O, H2O2, O3 or a combination thereof;
- and
- heating the flowable layer in the heating chamber to form a cured layer by a curing process,
- wherein the high-pressure process is performed at a pressure of over 2 atmospheres, and after the cured layer is formed, no heating process is performed to the cured layer.
Dependencies are inferred from the claim text.