Sputtering target for forming protective film and laminated wiring film
AssigneeMitsubishi Materials Corporation
InventorsSatoru Mori, Souhei Nonaka
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Abstract
A sputtering target for forming protective film according to the invention is used to form protective film on one surface or both surfaces of a Cu wiring film, and includes 8.0 to 11.0% by mass of Al, 3.0 to 5.0% by mass of Fe, 0.5 to 2.0% by mass of Ni and 0.5 to 2.0% by mass of Mn with a remainder of Cu and inevitable impurities. In addition, a laminated wiring film includes a Cu wiring film and protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by using the above sputtering target.
Claims1
A backing plate-attached target for forming protective film on one surface or both surfaces of a Cu wiring film,
- the backing plate-attached target comprising a backing plate and a sputtering target that is soldered by using indium on the backing plate,
- the sputtering target consisting of:
- 8.0% by mass to 11.0% by mass of Al;
- 3.0% by mass to 5.0% by mass of Fe;
- 0.5% by mass to 2.0% by mass of Ni;
- and
- 0.5% by mass to 2.0% by mass of Mn
- with a remainder of Cu and inevitable impurities.
Dependencies are inferred from the claim text.