Directing plasma distribution in plasma-enhanced chemical vapor deposition

A chemical vapor deposition (CVD) device, comprising:

• a CVD chamber comprising:
• a plasma zone, and
• an injection assembly, comprising:
• an annular pumping liner surrounding a shower head and having a set of liner apertures penetrating an outer surface of the annular pumping liner through which a precursor is emitted into the plasma zone;
• a precursor source connectable with the injection assembly and storing the precursor;
• a plasma generator configured to generate a plasma from the precursor in the plasma zone;
• at least one electromagnet positioned at a fixed location within a periphery of the plasma zone;
• and
• an electromagnet controller configured to adjust power to the at least one electromagnet based upon a specified distribution of the plasma relative to a substrate.

A chemical vapor deposition (CVD) device for applying plasma during formation of a semiconductor device on a substrate, comprising:

• a CVD chamber comprising:
• a plasma zone, and
• an injection assembly, comprising:
• an annular pumping liner surrounding a shower head and having a set of liner apertures penetrating an outer surface of the annular pumping liner through which a precursor is emitted into the plasma zone;
• a precursor source connectable with the CVD chamber and storing the precursor;
• a plasma generator configured to generate the plasma from the precursor;
• and
• an electromagnet positioned at a fixed location and configured to adjust an electromagnetic field based upon a specified distribution of the plasma relative to the substrate to steer the plasma relative to the substrate, wherein a bottom surface of the electromagnet is above a top surface of the substrate.