Capacitively coupled plasma source for abating compounds produced in semiconductor processes

A plasma source, comprising:

• a first annular plate having an outer edge and an inner edge;
• a second annular plate parallel to the first annular plate, wherein the second annular plate has an outer edge and an inner edge;
• an outer cylindrical wall disposed between the outer edges of the first and second annular plates;
• an cylindrical electrode disposed between the inner edges of the first and second annular plates, wherein a plasma region is defined by the cylindrical electrode, the outer cylindrical wall, the first annular plate and the second annular plate;
• a first shield disposed adjacent to the first annular plate in the plasma region;
• and
• a second shield disposed adjacent to the surface of the second annular plate in the plasma region.

A vacuum processing system, comprising:

• a vacuum processing chamber;
• a foreline coupled to the vacuum processing chamber;
• and
• a plasma source coupled to the foreline, wherein the plasma source comprises:
• a first plate having an outer edge and an inner edge;
• a second plate parallel to the first plate, wherein the second plate has an outer edge and an inner edge;
• an outer wall disposed between the outer edges of the first and second plates;
• an electrode disposed between the inner edges of the first and second plates, wherein a plasma region is defined by the electrode, the outer wall, the first plate and the second plate;
• a first shield disposed adjacent to the first plate in the plasma region;
• and
• a second shield disposed adjacent to the second plate in the plasma region.